A 1-Tap 40-Gbps Look-ahead Decision Feedback Equalizer in 0.18μm SiGe BiCMOS Technology
نویسندگان
چکیده
This paper describes a fully-differential 1-Tap decision feedback equalizer (DFE) in 0.18μm SiGe BiCMOS technology. The circuit is capable of equalizing NRZ data up to 40 Gbps. A look-ahead architecture is used with modifications to reduce complexity in the high speed clock distribution. An analog differential voltage controls the tap weights. The design is fabricated in 0.18μm SiGe BiCMOS technology with a 160GHz ft. It occupies an area of 1.5mmX1mm and operates from a 3.3V supply with 230mA current. It is the first feedback equalizer at 40 Gbps in silicon.
منابع مشابه
A 49-Gb/s, 7-Tap Transversal Filter in 0.18 μm SiGe BiCMOS for Backplane Equalization
This paper describes the first integrated transversal filter for feed-forward equalizers (FFE) operating above 40 Gb/s. Equalization of a 2−1 PRBS over a 9-ft and 6.5-ft cable with SMA connectors is demonstrated on-wafer at 40 Gb/s and 49 Gb/s respectively. The circuit is implemented in a commercial 0.18 μm SiGe BiCMOS process and is based on a differential distributed 7-tap fractionally spaced...
متن کاملA 10 Gb/s Equalizer in 0.18μm CMOS Technology for High-speed SerDes
A 10 Gb/s equalizer consisting of analog equalizer and two-tap halfrate decision feedback equalizer (DFE) in a 0.18μm CMOS has been designer. By employing capacitive degeneration and inductive peaking techniques, the analog equalizer achieves large boosting. The pipelined half-rate architecture is used to improve the transmitted data rate in DFE with a small increase in area. Measurement result...
متن کاملNoise Analysis of Ultra High Speed SiGe BiCMOS Track and Hold Amplifier for Fiber Optic Equalizer
Noise performance of the switched emitter follower (SEF) track and hold (TH) amplifier is analyzed. Simulations based on a commercial available 130 nm SiGe HBT process technology are implemented with the SpectreRF circuit simulator. It is shown that both the thermal noise and shot noise contribute to the TH amplifier (THA) at ultra high frequency. Simulations also locate the major noise contrib...
متن کاملOptimization of a SiGe:C HBT in a BiCMOS Technology for Low Power Wireless Applications
The performance enhancement of a SiGe:C HBT for RF/IF applications is described for Motorola’s 0.35μm and 0.18μm BiCMOS technologies. Cutoff frequencies (fT) have been improved from 50GHz to 78/84GHz (0.35/0.18μm BiCMOS), with a reduction in minimum noise figure (NF) from 0.7dB to 0.3dB. Improvements occurred through the optimization of the intrinsic collector and base dopant profiles, extrinsi...
متن کامل65GHz Doppler Sensor with On-Chip Antenna in 0.18μm SiGe BiCMOS
A single-chip 65GHz Doppler radar transceiver with on-chip patch antenna is reported. Implemented in a production 0.18μm SiGe BiCMOS process, it features a differential output transmit power of 4.3dBm, 16.5dB singleended down-conversion gain and a double-sideband noise figure of 12.8dB. The radar includes a 65GHz 2-stage cascode LNA with S11<-15dB at 50-94GHz and 14dB gain at 65GHz, a double-ba...
متن کامل